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| ? 2008 microchip technology inc. ds22063b-page 1 mcp1631/hv/mcp1631v/vhv features programmable switching battery charger designs high-speed analog pwm controller (2 mhz operation) combine with microcontroller for intelligent power system development peak current mode control (mcp1631) voltage mode control (mcp1631v) high voltage options operate to +16v input: - mcp1631hv current mode - mcp1631vhv voltage mode regulated output voltage options: - +5.0v or +3.3v - 250 ma maximum current external oscillator input sets switching frequency and maximum duty cycle limit external reference input sets regulation voltage or current error amplifier, battery current i sns amplifier, battery voltage v sns amplifier integrated integrated overvoltage comparator integrated high current low side mosfet driver (1a peak) shutdown mode reduces iq to 2.4 a (typical) internal overtemperature protection undervoltage lockout (uvlo) package options: - 4 mm x 4 mm 20-lead qfn (mcp1631/mcp1631v only) - 20-lead tssop (all devices) - 20-lead ssop (all devices) applications high input voltage programmable switching battery chargers supports multiple chemistries li-ion, nimh, nicd intelligent and pb-acid led lighting applications constant current sepi c power train design usb input programmable switching battery chargers general description the mcp1631/mcp1631v is a high-speed analog pulse width modulator (pwm) used to develop intelligent power systems. when combined with a microcontroller, the mcp1631/mcp1631v will control the power system duty cycle providing output voltage or current regulation. the microcontroller can be used to adjust output voltage or current, switching frequency and maximum duty cycle wh ile providing additional features making the power system more intelligent, robust and adaptable. typical applications for the mcp1631/mcp1631v include programmable swit ch mode battery chargers capable of charging multiple chemistries, like li-ion, nimh, nicd and pb-acid configured as single or multiple cells. by combining with a small microcontroller, intelligent led lighting designs and programmable sepic topology voltage and current sources can also be developed. the mcp1631/mcp1631v inputs were developed to be attached to the i/o pins of a microcontroller for design flexibility. additional features integrated into the mcp1631hv/mcp1631vhv provide signal condition- ing and protection features for battery charger or constant current source applications. for applications that operate from a high voltage input, the mcp1631hv and mcp1631vhv device options can be used to operate directly from a +3.5v to +16v input. for these applications, an additional low drop out +5v or +3.3v regulated output is available and can provide current up to 250 ma to power a microcontroller and auxiliary circuits. high-speed, pulse width modulator downloaded from: http:///
mcp1631/hv/mcp1631v/vhv ds22063b-page 2 ? 2008 microchip technology inc. package types 1 23 comp pgnd 45 67 89 10 20 1918 1716 1514 1312 11 20-lead ssop and tssop mcp1631/mcp1631v shdn osc in osc dis ov in v ref a gnd ncnc nc a vdd_in vs in is in vs out is out fb cs/v ramp p vdd v ext 1 23 comp pgnd 45 67 89 10 20 1918 1716 1514 1312 11 20-lead ssop and tssop mcp1631hv/mcp1631vhv shd n osc in osc dis ov in v ref a gnd ncnc a vdd_out vs in is in vs out is out fb cs/v ramp p vdd v ext v in comp p gnd shdn a gnd ncnc vs in is in vs out is out fb cs/v ramp p vdd v ext a vdd_in 1 23 4 5 6 7 8 9 10 15 1413 12 11 20 19 1 8 17 16 nc osc in osc dis ov in v ref ep 20 lead 4x4 qfn mcp1631/mcp1631v 21 downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 3 mcp1631/hv/mcp1631v/vhv typical application diagram comp p gnd shdn osc in osc dis ov in v ref a gnd nc nc a vdd_out vs in is in vs out is out fb cs p vdd v ext l1a c in schottky diode c out l1b c c mcp1631hv v in r therm a vdd_out gp0/c c gp5 gp3 gp1/c pic12f683 led r gnd gp4 ccp1 v dd v in range +5.5v to +16v multi-cell, multi-chemistry charger downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 4 ? 2008 microchip technology inc. functional block diagram (1) mcp1631hv/vhv high speed pic pwm r s q q a1 + - v ref fb c1 + - cs/vr amp osc in p vdd comp p gnd v ext 2r 2.7v clamp ot uvlo 100 k ? 0.1 a v dd r + - r r 10r + - a2 a3 +3.3v or +5.0v ldo 250 ma v in a vdd_out / a vdd_in v dd shutdown control a3 remains on shdn is in is out vs in vs out c2 + - v dd a gnd ov in overvoltage comp w/ hysteresis internal1.2v v ref osc dis 100 k ? remove for mcp1631v and mcp1631vhv options internal regulator for mcp1631hv and mcp1631vhv options only; for mcp1631 and mcp1631v av dd_in is input v dd v dd v dd v dd v dd note 1: for shutdown control, amplifier a3 remains functional so battery voltage can be sensed during discharge phase. 2: for hv options, internal low drop out regulator provides +3.3v or +5.0v bias to v dd . downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 5 mcp1631/hv/mcp1631v/vhv 1.0 electrical characteristics absolute maximum ratings ? v in - gnd (mcp1631/v)................................................+6.5v v in - gnd (mcp1631hv/vhv)....................................+18.0v all other i/o ..............................(gnd - 0.3v) to (v dd + 0.3v) lx to gnd............................................. -0.3v to (v dd + 0.3v) v ext output short circuit current ........................ continuous storage temperature .....................................-65c to +150c maximum junction temperature ...................-40c to +150c operating junction temperature...................-40c to +125c esd protection on all pins: hbm ................................................................................. 4 kv mm ..................................................................................400v ? notice: stresses above those listed under "maximum ratings" may cause permanent dam age to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v dd for typical values = 5.0v, t a for typical values = +25c, t a = -40c to +125c for all minimum and maximums. parameters sym min typ max units conditions input characteristics input voltage (mcp1631/v) v dd 3.0 5.5 v non-hv options input voltage (mcp1631hv/vhv) v dd 3.5 16.0 v hv options (note 2) undervoltage lockout (mcp1631/v) uvlo 2.7 2.8 3.0 v v in falling, v ext low when input below uvlo threshold undervoltage lockout hysteresis (mcp1631/mcp1631v) uvlo _hys 40 64 100 mv uvlo hysteresis input quiescent current (mcp1631/v, mcp1631hv,vhv) i(v in )3 . 75m a s h d n =v dd =osc dis shutdown current i_avdd for mcp1631/v i_vin for mcp1631hv/vhv i in_shdn 2.4 4.4 1217 aa shdn =gnd=osc dis , note: amplifier a3 remains powered during shutdown. osc in , osc dis and shdn input levels low level input voltage v il 0 . 8v high level input voltage v ih 2.0 v input leakage current i leak 0.005 1 a external oscillator range f osc 2 mhz maximum operating frequency is dependent upon circuit topology and duty cycle. minimum oscillator high time minimum oscillator low time t oh _min. t ol _min. 1 0n s oscillator rise and fall time t r and t f 0.01 10 s note 1 oscillator input capacitance c osc 5p f note 1: external oscillator input (osc in ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. signal levels between 0.8v and 2.0v with rise and fall times measured between 10% and 90% of maximum and minimum values. not prod uction tested. additional timing specific ations were fully characterized and specified that are not production tested. 2: the minimum v in must meet two conditions: v in 3.5v and v in (v out(max) + v dropout(max) ). 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty c ycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 3.5v, whichever is greater. downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 6 ? 2008 microchip technology inc. external reference input reference voltage input v ref 0a v dd v the reference input is capable of rail-to-rail operation. internal driver) r dson p-channel r dson_p 7 . 21 5 r dson n-channel r dson_n 3 . 81 5 v ext rise time t rise 2 . 51 8n s c l = 100 pf typical for v in =5v (note 1) v ext fall time t fall 2 . 71 8n s c l = 100 pf typical for v in =5v (note 1) error amplifier (a1) input offset voltage v os -5 -0.6 +5 mv a1 input bias current i bias 0 . 0 51 a error amplifier psrr psrr 85.4 db v in = 3.0v to 5.0v, v cm =1.2v common mode input range v cm gnd - 0.3 v in v common mode rejection ratio 90 db v in =5v, v cm = 0v to 2.5v open-loop voltage gain a vol 80 95 db r l =5k ? to v in /2, 100 mv < v eaout < v in - 100 mv, v cm =1.2v low-level output v ol 25 gnd + 65 mv rl = 5 k ? to v in /2 gain bandwidth product gbwp 3.5 mhz v in =5v error amplifier sink current i sink 41 2m a v in =5v, v ref =1.2v, v fb =1.4v, v comp =2.0v error amplifier source current i source -2 -9.8 ma v in =5v, v ref =1.2v, v fb =1.0v, v comp =2.0v, absolute value current sense (cs) amplifier (a2) input offset voltage v os -3.0 1.2 +3.0 mv cs input bias current i bias 0 . 1 31 a cs amplifier psrr psrr 65 db v in = 3.0v to 5.0v, v cm = 0.12v, gain = 10 closed-loop voltage gain a2 vcl 1 0v / v r l =5k ? to v in /2, 100 mv < v out < v in - 100 mv, v cm = +0.12v low-level output v ol 5 11 gnd + 50 mv rl = 5 k ? to v in /2 cs sink current i sink 51 7 . 7m a cs amplifier source current i source -5 -19.5 ma voltage sense (vs) amplifier (a3) input offset voltage v os -5 0.9 +5 mv vs input bias current i bias 0 . 0 0 11 a dc characteristics (continued) electrical specifications: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v dd for typical values = 5.0v, t a for typical values = +25c, t a = -40c to +125c for all minimum and maximums. parameters sym min typ max units conditions note 1: external oscillator input (osc in ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. signal levels between 0.8v and 2.0v with rise and fall times measured between 10% and 90% of maximum and minimum values. not prod uction tested. additional timing specific ations were fully characterized and specified that are not production tested. 2: the minimum v in must meet two conditions: v in 3.5v and v in (v out(max) + v dropout(max) ). 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty c ycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 3.5v, whichever is greater. downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 7 mcp1631/hv/mcp1631v/vhv vs amplifier psrr psrr 65 db v in = 3.0v to 5.0v, v cm =1.2v common mode input range v cm gnd av dd v rail to rail input closed-loop voltage gain a3 vcl 1v / v r l =5k ? to v in /2, 100 mv < v eaout < v in - 100 mv, v cm =1.2v low-level output v ol 38 gnd + 85 mv rl = 5 k ? to v in /2 vs amplifier sink current i sink 15m a vs amplifier source current i source -2 -5 ma peak current sense input (c1) maximum current sense signal mcp1631/mcp1631hv v cs_max 0.85 0.9 0.98 v maximum ramp signal mcp1631v/mcp1631vhv v ramp 2.7 2.78 2.9 v v in > 4v maximum cs input range limited by comparator input common mode range. v cs_max =v in -1.4v current sense input bias current i cs_b - 0 . 1 a v in =5v delay from cs to v ext mcp1631 t cs_vext 8 . 52 5n s note 1 minimum duty cycle dc min 0% v fb =v ref +0.1v, v cs =gnd overvoltage sense comparator (c2) ov reference voltage high ov _vref_h 1 . 2 3v ov reference voltage low ov _vref_l 1.15 1.18 1.23 v ov hysteresis ov_hys 50 mv overvoltage comparator hysteresis ov_in bias current ov_ ibias 0 . 0 0 11 a delay from ov to v ext t ov_vext 63 150 ns delay from ov detection to pwm termination (note 1) ov input capacitance c_ ov 5p f internal regulator hv options input / output characteristics input operating voltage v in 3.5 16.0 v note 2 maximum output current i out_ma 250 ma output short circuit current i out_sc 400 ma v in = v in(min) ( note 2) , v out = gnd, current (average current) measured 10 ms after short is applied. output voltage regulation v out v r -3.0% v r 0.4% v r +3.0% v v r = 3.3v or 5.0v v out temperature coefficient tcv out 50 150 ppm/ c note 3 dc characteristics (continued) electrical specifications: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v dd for typical values = 5.0v, t a for typical values = +25c, t a = -40c to +125c for all minimum and maximums. parameters sym min typ max units conditions note 1: external oscillator input (osc in ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. signal levels between 0.8v and 2.0v with rise and fall times measured between 10% and 90% of maximum and minimum values. not prod uction tested. additional timing specific ations were fully characterized and specified that are not production tested. 2: the minimum v in must meet two conditions: v in 3.5v and v in (v out(max) + v dropout(max) ). 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty c ycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 3.5v, whichever is greater. downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 8 ? 2008 microchip technology inc. temperature specifications line regulation v out / (v out x v in ) -0.3 0.1 +0.3 %/v (v out(max) + v dropout(max) ) v in 16v note 2 load regulation v out / v out -2.5 1.0 +2.5 % i l = 1.0 ma to 250 ma, note 4 dropout voltage note 2 , note 5 v dropout 330 650 mv i l = 250 ma, v r = 5.0v 525 725 mv i l = 250 ma, v r = 3.3v output delay time t delay 1000 s v in = 0v to 6v, v out = 90% v r , r l = 50 ? resistive output noise e n 8 v / (hz) 1/2 i l = 50 ma, f = 1 khz, c out = 1f power supply ripple rejection ratio psrr 44 db f = 100 hz, c out = 1 f, i l = 100 a, v inac =100 mv pk-pk, c in = 0 f, v r =1.2v protection features thermal shutdown t shd 150 c thermal shutdown hysteresis t shd_hys 1 8 c electrical specifications: unless otherwise indicated, all limits are specified for: v in + 3.0v to 5.5v parameters sym min typ max units conditions temperature ranges operating junction temperature range t j -40 +125 c steady state storage temperature range t a -65 +150 c maximum junction temperature t j +150 c transient package thermal resistances thermal resistance, 20l-tssop ja 90 c/w typical 4 layer board with interconnecting vias thermal resistance, 20l-ssop ja 89.3 c/w typical 4 layer board with interconnecting vias thermal resistance, 20l-qfn ja 43 c/w typical 4 layer board with interconnecting vias dc characteristics (continued) electrical specifications: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v dd for typical values = 5.0v, t a for typical values = +25c, t a = -40c to +125c for all minimum and maximums. parameters sym min typ max units conditions note 1: external oscillator input (osc in ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. signal levels between 0.8v and 2.0v with rise and fall times measured between 10% and 90% of maximum and minimum values. not prod uction tested. additional timing specific ations were fully characterized and specified that are not production tested. 2: the minimum v in must meet two conditions: v in 3.5v and v in (v out(max) + v dropout(max) ). 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty c ycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 3.5v, whichever is greater. downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 9 mcp1631/hv/mcp1631v/vhv 2.0 typical performance curves note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-1: undervoltage lockout vs. temperature. figure 2-2: undervoltage lockout hysteresis vs. temperature. figure 2-3: input quiescen t current vs. temperature. figure 2-4: shutdown current vs. temperature (mcp1631/mcp1631v). figure 2-5: oscillator input threshold vs. temperature. figure 2-6: oscillator disable input threshold vs. temperature. note: the graphs and tables provided following this note ar e a statistical summary based on a limited number of samples and are provided for informational purposes onl y. the performance charac teristics listed herein are not tested or guaranteed. in some graphs or t ables, the data presented ma y be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 2.8 2.81 2.82 2.83 2.84 2.85 2.86 2.87 2.88 2.89 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) undervoltage lockout (v) device turn on device turn off 0.061 0.062 0.063 0.064 0.065 0.066 0.067 0.068 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) uvlo hyst (v) 2.80 3.00 3.20 3.40 3.60 3.80 4.00 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) input quiescent current (ma) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 1.00 1.30 1.60 1.90 2.20 2.50 2.80 3.10 3.40 3.70 4.00 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) shutdown current (a) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 1.00 1.10 1.20 1.30 1.40 1.50 1.60 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) osc_in input threshold (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) osc_dis input threshold voltage (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 10 ? 2008 microchip technology inc. typical performance curves (continued) note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-7: v ext p-channel driver r dson vs. temperature. figure 2-8: v ext n-channel driver r dson vs. temperature. figure 2-9: v ext rise time vs. temperature. figure 2-10: v ext fall time vs. temperature. figure 2-11: amplifier a1 offset voltage vs. temperature. figure 2-12: amplifier a1 output voltage low vs. temperature. 4 6 8 10 12 14 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) ext output p-channel r dson (ohms) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) ext output n-channel rdson (ohms) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 -40-25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) v ext rise time (ns) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v c l = 100 pf 2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) v ext fall time (ns) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v c l = 100 pf -0.80 -0.75 -0.70 -0.65 -0.60 -0.55 -0.50 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a1 offset voltage (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0 5 10 15 20 25 30 35 40 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a1 v out low (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 11 mcp1631/hv/mcp1631v/vhv typical performance curves (continued) note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-13: amplifier a1 sink current vs. temperature. figure 2-14: amplifier a1 source current vs. temperature. figure 2-15: amplifier a2 offset voltage vs. temperature. figure 2-16: amplifier a2 output voltage low vs. temperature. figure 2-17: amplifier a2 sink current vs. temperature. figure 2-18: amplifier a2 source current vs. temperature. 8.0 9.2 10.4 11.6 12.8 14.0 15.2 16.4 17.6 18.8 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a1 sink current (ma) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 5.0 6.5 8.0 9.5 11.0 12.5 14.0 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a1 source current (ma) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a2 offset voltage (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 4 6 8 10 12 14 16 18 -40-25 -10 5 2035 50 65 80 95 110125 ambient temperature (c) a2 v out low (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 10 15 20 25 30 35 40 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a2 sink current (ma) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 10 12 14 16 18 20 22 24 26 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a2 source current (ma) v dd = +3.0v v dd = +3.3v v dd = +5.0v v dd = +5.5v downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 12 ? 2008 microchip technology inc. typical performance curves (continued) note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-19: amplifier a3 offset voltage vs. temperature. figure 2-20: amplifier a3 ou tput voltage low vs. temperature. figure 2-21: amplifier a3 sink current vs. temperature. figure 2-22: amplifier a3 source current vs. temperature. figure 2-23: mcp1631 and mcp1631hv cs maximum voltage (v) vs. temperature. figure 2-24: mcp1631v and mcp1631vhv v ramp max voltage (v). 0 0.5 1 1.5 2 2.5 -40-25 -10 5 2035 50 65 80 95 110125 ambient temperature (c) a3 offset voltage (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0 v v dd = +5.0v v dd = +5.5v 0 10 20 30 40 50 60 70 -40-25 -10 5 2035 50 65 80 95 110125 ambient temperature (c) a3 v out low (mv) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 2.8 3.3 3.8 4.3 4.8 5.3 5.8 6.3 6.8 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a3 sink current (ma) v dd = +3.0v to +5.5v 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) a3 source current (ma) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0.900 0.902 0.904 0.906 0.908 0.910 0.912 0.914 0.916 0.918 0.920 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) cs max threshold voltage (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 2.770 2.772 2.774 2.776 2.778 2.780 2.782 2.784 2.786 2.788 2.790 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) mcp1631v v ramp maximum voltage (v) v dd = +5.0v downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 13 mcp1631/hv/mcp1631v/vhv typical performance curves (continued) note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-25: overvoltage threshold high (v) vs. temperature. figure 2-26: overvoltage threshold low (v) vs. temperature. figure 2-27: overvoltage threshold hysteresis (v) vs. temperature. figure 2-28: shutdown input voltage threshold (v) vs. temperature. figure 2-29: ldo quiescent current vs. input voltage. figure 2-30: ldo quiescent current vs. junction temperature. 1.2 1.21 1.22 1.23 1.24 1.25 1.26 1.27 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) ov threshold high (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 1.182 1.183 1.183 1.184 1.184 1.185 1.185 1.186 1.186 1.187 1.187 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) ov threshold low (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 -40 -25 -10 5 2035 50 65 80 95 110 125 ambient temperature (c) ov threshold hysteresis (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -40 -25 -10 5 2035 50 65 80 95 110 125 ambinet temperature (c) shutdown input threshold voltage (v) v dd = +3.0v v dd = +3.3v v dd = +4.0v v dd = +5.0v v dd = +5.5v 1.00 2.00 3.00 4.00 5.00 6.00 6 8 10 12 14 16 18 input voltage (v) hv ldo quiescent current (a) v out = 5.0v i out = 0 a +25c +130c -45c 0c +90c 0.00 0.50 1.00 1.50 2.00 2.50 3.00 -45-20 5 305580105130 junction temperature (c) hv ldo quiescent current (a) i out = 0ma v out = 5.0v v in = 6.0v v out = 1.2v v in = 2.7v v out = 2.5v v in = 3.5v downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 14 ? 2008 microchip technology inc. typical performance curves (continued) note: unless otherwise noted, v in = 3.0v to 5.5v, f osc = 1 mhz with 10% duty cycle, c in = 0.1 f, v in for typical values = 5.0v, t a for typical values = +25c. figure 2-31: ldo output voltage vs. load current. figure 2-32: ldo dropout voltage vs. load current. figure 2-33: ldo load regulation vs. temperature. figure 2-34: ldo line regulation vs. temperature. figure 2-35: ldo psrr vs. frequency. figure 2-36: ldo output noise vs. frequency. 4.92 4.94 4.96 4.98 5.00 5.02 5.04 5.06 0 50 100 150 200 250 load current (ma) output voltage (v) v in = 6 v v out = 5.0 v +25c +130c -45c 0c +90c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 25 50 75 100 125 150 175 200 225 250 load current (ma) dropout voltage (v) v out = 5.0v +25c +130c +0c -45c +90c -0.40 -0.20 0.00 0.20 0.40 0.60 0.80 1.00 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) v out = 5.0v i out = 1 to 250 ma v in = 6v v in = 14v v in = 12v v in = 8v v in = 16v 0.06 0.08 0.10 0.12 0.14 0.16 0.18 -45-20 5 305580105130 temperature (c) line regulation (%/v) v out = 5.0v v in = 6.0v to 16.0v 200 ma 100 ma 0 ma 250 ma -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 frequency (khz) psrr (db) v r =5.0v v in =6.0v v inac = 100 mv p-p c in =0 f i out =100 a 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 frequency (khz) noise (v/ hz) v r = 5.0v, v in = 6.0v i out = 50 ma downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 15 mcp1631/hv/mcp1631v/vhv 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . table 3-1: pin function table 3.1 power ground (p gnd ) connect power ground return pin to power ground plane, high peak current flows through the p gnd during the turn on and turn off the external mosfet devices. 3.2 shutdown input (shdn ) shutdown input logic low disables device and lowers i q to minimum value, amplifier a3 (vs) remains functional for battery voltage sense applications. 3.3 oscillator input (osc in ) external oscillator input, used to set power train switching frequency and maximum duty cycle, v ext enabled while low and disabled while high. 3.4 oscillator disable (osc dis ) oscillator disable input, used to asycnronously terminate the v ext duty cycle. commonly used to modulate current for led driver applications.for minimum shutdown i q , connect osc dis to shdn . 3.5 overvoltage input (ov in ) overvoltage comparator input, connect to voltage divider, internal comparator terminates v ext output in 50 ns to limit output volt age to predetermined value. 3.6 external reference voltage input (v ref ) external voltage reference input, connect fixed or variable external reference to v ref , with a1 configured as an error amplifier, the power supply output variable (voltage or current) will follow this input. mcp1631/mcp1631v mcp1631hv/ mcp1631vhv sym description tssop/ssop 4x4 qfn tssop/ssop 11 51p gnd power ground return 21 62s h d n shutdown input 31 73o s c in external oscillator input 41 84o s c dis oscillator disable input 51 95o v in overvoltage comparator input 62 06v ref external voltage reference input 717a gnd quiet or analog ground 8,9,10 2,4,12 8,9 nc no connection 1 0v in high voltage input 11 3 a vdd_in analog bias voltage input 1 1a vdd_out regulated v dd output 1 251 2v s in voltage sense amplifier (a3) input 1 361 3i s in current sense input 1 471 4v s out voltage sense amplifier output 1 581 5i s out current sense amplifier output 16 9 16 comp error amplifier (a1) output 17 10 17 fb error amplifier inverting input (a1) 18 11 18 cs/v ramp cs - current sense input; v ramp voltage ramp input 19 13 19 p vdd power v dd input 20 14 20 v ext external driver output 21 ep exposed thermal pad (ep); must be connected to a gnd downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 16 ? 2008 microchip technology inc. 3.7 analog ground (a gnd ) quiet or analog ground, connect to analog ground plane to minimize noise on sensitive mcp1631 circuitry. 3.8 no connection (nc) no connection. 3.9 input voltage (v in ) high voltage input for mcp1631hv/mcp1631vhv devices, operates from 3.5v to 16v input supply. 3.10 analog supply input (a vdd_in ) analog bias input, minimum 3.0v to 5.5v operation for mcp1631/mcp1631v devices. 3.11 analog supply output (a vdd_out ) regulated v dd output used to power internal mcp1631hv/mcp1631vhv and external microcontroller, supplies up to 250 ma of bias current at 3.3v or 5.0v regulated low drop out rail. 3.12 voltage sense input (vs in ) voltage sense amplifier (a3) input, connect to high impedance battery voltage resistor divider to sense battery voltage with minimal loading. 3.13 current sense input (is in ) connect to sepic secondary side sense resistor to develop a regulated current source used to charge multi-chemistry batteries. 3.14 voltage sense output (vs out ) voltage sense amplifier output, connect to microcontroller analog to digital converter to measure battery voltage. 3.15 current sense output (is out ) current sense amplifier output, connect to error amplifier (a1) inverting input (fb) to regulate sepic output current. 3.16 error amplifier output (comp) error amplifier (a1) output, connect control loop compensation from fb input to comp output pin. 3.17 feedback (fb) error amplifier input (a1), connect to current sense output amplifier (a2) to regulate current. 3.18 current sense or voltage ramp (cs/v ramp ) for mcp1631/mcp1631hv applications, connect to low side current sense of sepic switch for current mode control and peak current limit. for mcp1631/ mcp1631hv application, connect artificial ramp voltage to v ramp input for voltage mode pwm control. 3.19 power vdd (p vdd ) power v dd input, v ext gate drive supply input, connect to +5.0v or +3.3v supply for driving external mosfet. 3.20 external driver (v ext ) high current driver output used to drive external mosfet at high frequency, capable of 1a peak currents with +5.0v p vdd . 3.21 exposed pad 4x4 qfn (ep) there is an internal electrical connection between the exposed thermal pad (ep) and the a gnd pin; they must be connected to the same potential on the printed circuit board (pcb). downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 17 mcp1631/hv/mcp1631v/vhv 4.0 detailed description 4.1 device overview the mcp1631/mcp1631v device family combines the analog functions to develop high frequency switch mode power systems while integrating features for battery charger and led current source applications. with the integration of a mosfet driver, voltage sense, current sense and over voltage protection, the mcp1631/mcp1631v is a highly integrated, high- speed analog pulse width modulator. the mcp1631/mcp1631v output (v ext ) is used to control the switch of t he power system (on and off time). by controlling the switch on and off time, the power system output can be regulated. with the oscillator and reference voltage as inputs, a simple interface to a microcontroller is available with the mcp1631/mcp1631v to develop intelligent power systems. a good example of an intelligent power system is a battery charger, programmable led driver current source or programmable power supply. the mcp1631/mcp1631v is a combination of specialty analog blocks consisting of a pulse width modulator (pwm), mosfet driver, current sense amplifier (a2), voltage sense amplifier (a3), overvoltage comparator (c2) and additional features (shutdown, undervoltage lockout, overtemperature protection). for the hv optio ns, an internal low dropout regulator is integrated for operation from high voltage inputs (mcp1631hv/mcp1631vhv). 4.2 pulse width modulator (pwm) the internal pwm of the mcp1631/mcp1631v is comprised of an error amplifier, high-speed comparator and latch. the output of t he amplifier is compared to either the mcp1631 cs (primary current sense input) or the mcp1631v v ramp (voltage mode ramp input) of the high speed comparator. when the cs or vramp signal reach the level of the error amplifier output, the on cycle is terminated and the external switch is latched off until the beginning of the next cycle (high to low transition of osc in ). 4.3 v ext mosfet driver the mcp1631/mcp1631v output can be used to drive the external mosfet directly for low side topology applications. the v ext is capable of sourcing up to 700 ma and sinking up to 1a of current from a p vdd source of 5v. typical output power using the v ext output to directly drive the external mosfet can exceed 50w depending upon application and switching frequency. 4.4 current sense amplifier (a2) the a2 current sense amplifier is used to sense current in the secondary side of a sepic converter or freewheeling current in a buck converter. the inverting amplifier has a built in voltage gain of ten with low offset and high speed. 4.5 voltage sense amplifier (a3) the a3 voltage sense amplifier is used to sense battery voltage. in battery powered applications, it is important to minimize the steady stage load current draw on the battery. the voltage sense amplifier (a3) is used to buffer a high impedance series divider used to reduce the battery pack voltage to a level that can be read using an analog to digital converter. the voltage sense amplifier draws a very low quiescent current and remains functional when the mcp1631/mcp1631v is shutdown making it possible to read battery voltage without turning on the charger. 4.6 overvoltage comparator(c2) the c2 overvoltage comparator is used to prevent the power system from being damaged when the load (battery) is disconnected. by comparing the divided down power train output voltage with a 1.2v internal reference voltage, the mcp1631/mcp1631v v ext output switching is interrupted when the output voltage is above a pre-set value. this limits the output voltage of the power train, the 0v comparators hysteresis will operate as a ripple regulator. 4.7 shutdown input the mcp1631/mcp1631v shutdown feature is used to disable the device with the exception of the voltage sense amplifier a3 to minimize quiescent current draw. while shutdown, a3 remains operational while the device draws 4.4 a from the input. 4.8 protection the mcp1631/mcp1631v has built in undervoltage lockout (uvlo) that ensures the output v ext pin is forced to a known state (low) when the input voltage or a vdd is below the specified value. this prevents the main mosfet switch from being turned on during a power up or down sequence. the mcp1631/mcp1631v provides a thermal shutdown protection feature, if the internal junction temperature of the device becomes high, the overtemperature protection feature will disable (pull the v ext output low) and shut down the power train. downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 18 ? 2008 microchip technology inc. notes: downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 19 mcp1631/hv/mcp1631v/vhv 5.0 application information 5.1 typical applications the mcp1631/mcp1631v can be used to develop intelligent power management solutions, typical applications include a multi-chemistry battery charger used to charge li-ion, nimh or nicd batteries and constant current led drivers. 5.2 battery charger design overview the design approach for developing high current switching battery chargers using the mcp1631 is described in this section. depending on input voltage range, there are two versions of the device that can be used to accommodate a very wide range of input voltages. for a regulated input voltage range of 5v, the mcp1631/mcp1631v device is used, for this input voltage application (regulated ac-dc converter or usb input), the mcp1631/mcp1631v is powered directly from the 5v dc input. for input voltages to +16v steady state with +18v transients, the mcp1631hv/mcp1631vhv, or high voltage option can be used. the high voltage devices integrate a low dropout (ldo) linear regulator with a set output voltage of +3.3v or +5.0v that internally powers the mcp1631hv/mcp1631vhv and is also capable of providing 250 ma of bias current for the attached microcontroller and other circuitry. mcp1631hv/ mcp1631vhv internal power dissipation must be considered when loading the internal ldo regulator. for higher input voltages the mcp1631/mcp1631v can be biased from an external regulated +3.0v to +5.5v supply. 5.3 programmable single ended primary inductive (sepic) current source the mcp1631/mcp1631v fami ly integrates features that are necessary to develop programmable current sources. the sepic converter is commonly used in battery charger applications. the primary or input inductor is used to filter i nput current and minimize the switching noise at the converter input. the primary to secondary capacitive isolat ion blocks any dc path from input to output making the sepic safer than buck or other non-isolat ed topologies. t he sepic rectifier blocks the reverse path preventing battery leakage, in other topologies an additional diode for blocking is necessary adding additional components and efficiency loss. the input or primary inductor and output or secondary inductor are typically constructed from a single magnetic device with two windings, this is commonly referred to as a coupled inductor. using coupled inductors has significant advantages in addition to the size and cost benefits of a single core with multiple windings. 5.4 mixed signal design for intelligent battery charge r design, a microcontroller is used to generate the proper charge profile, charge termination, safety timers and battery charger features. when using the mcp1631/mcp1631v for li-ion battery charger applications, the microcontroller is also used to generate the constant voltage regulation phase of the charge cycle. this is accomplished by using the external reference featur e of the mcp1631/mcp1631v as a programmable current source. the microcontroller is used to vary the v ref input of the mcp1631/ mcp1631v. the charge current into the battery is regulated by the mcp1631/mc p1631v, the level that it is regulated to is set by the programmability of the microcontroller. the internal mcp1631/mcp1631v analog compo- nents are used to regulate the microcontroller programmed current. the secondary or battery current is sensed using amplifier a2 , the output of a2 is feed into the input of the error am plifier a1, the output of a1 sets the peak switch current of the sepic converter, it increases or decreases the battery current to match its (a1) inputs. by increasing the v ref or non-inverting input of a1, the battery current is increased. 5.5 safety features the mcp1631/mcp1631v integrates a high-speed comparator used to protect the charger and battery from being exposed to high voltages if the battery is removed or opens. comparator c2 is used to sense the sepic output voltage. if the divided down output voltage becomes higher than the 1.2v internal mcp1631/mcp1631v reference, the v ext pwm output is terminated within 50 ns preventing the build up of voltage on the sepic output. peak switch current is limited by the mcp1631/ mcp1631v comparator c1 and error amplifier a1 output voltage clamp. for the mcp1631, the error amplifier output is clamped at 2.7v. the a1 output is divided down by 1/3 and compared with cs (current sense) input. the v ext output is turned off if the cs input reaches a level of 1/3 of 2.7v or 0.9v in 12 ns, preventing the external switch current from becoming high enough to damage the sepic power train. internal overtemperature pr otection limits the device junction temperature to 150c preventing catastrophic failure for overtemperature conditions. once the temperature decreases 10c, the device will resume normal operation. safety timers are typically used to limit the amount of energy into a faulted ba ttery or pack. this is accomplished using the microcontroller and mcp1631/ mcp1631v shutdown feature. downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 20 ? 2008 microchip technology inc. 5.6 osc disable feature the oscillator disable or osc_dis input is used to asychronously term inate the pwm v ext output. this can be used with a slow pwm input to modulate current into an led for lighting applications. figure 5-1: +5v ac-dc or usb input application. comp p gnd shdn osc in osc dis ov in v ref a gnd nc nc a vdd_in vs in is in vs out is out fb cs p vdd v ext l1a cin schottky diode c out l1b c c mcp1631 a vdd_out gp0/c c gp5 gp3 gp1/c pic12f683 led r gnd gp4 ccp1 v dd v in range +4.5v to +5.5v multi-cell multi-chemistry charger nc r therm downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 21 mcp1631/hv/mcp1631v/vhv figure 5-2: +5.5v to +16.0v input. comp pgnd shdn osc in osc dis ov in v ref a gnd nc nc a vdd_out vs in is in vs out is out fb cs p vdd v ext l1a c in schottky diode c out l1b c c mcp1631hv v in a vdd_out c pic12f683 led r v in range +5.5v to +16v multi-cell multi-chemistry charger gp0/c gp5 gp3 gp1/c gnd gp4 ccp1 v dd r therm downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 22 ? 2008 microchip technology inc. figure 5-3: wide range high voltage input. l1a cin schottky diode c out l1b c c mcp1631 a vdd_out c pic12f683 led r v in range +6v to +40v multi-cell multi-chemistry charger c out +5v hv regulator comp p gnd shdn osc in osc dis ov in v ref a gnd nc nc a vdd_in vs in is in vs out fb cs p vdd v ext ncis out gp0/c gp5 gp3 gp1/c gnd gp4 ccp1 v dd r therm downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 23 mcp1631/hv/mcp1631v/vhv 6.0 packaging information 6.1 package marking information (not to scale) legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 20-lead ssop (all devices) 20-lead 4x4 qfn (mcp1631/mcp1631v) 20-lead tssop (all devices) xxxxxxxxxxx xxxxxx ywwnnn xxxxxxxxxxxxxxxxxxxxxx yywwnnn xxxxxxxxxxxxxnnn yyww example: example: example: 1631e/ml^^ 0822 256 1631vest^^ 0822256 1631hv33est^^256 0822 3 e 3 e 3 e downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 24 ? 2008 microchip technology inc. !" #$ % ! "#$ %! & '(!%&! %( %")% % % " * ) ! %" + & "% ,- . /01 / & % # % ! ))% !%% ,21 $ & '! ! )% !%% '$ $ & % ! % 2 % & %! % * " ) ' % * $ % %" % %% 133)))& &3 * 4% 55, , & 5&% 6 67 8 6!&( $ 6 % ./0 7 9 % : % " $$ . 0 % % * + ,2 7 ;"% , /0 ,# " ";"% , < : 7 5% /0 ,# " "5% < : 0 % %;"% ( : . + 0 % %5% 5 + . 0 % %% ,# " " = > > d exposed pad e e2 21 n top view note 1 n l k b e d2 2 1 a a1 a3 bottom view ) 0 ? 2008 microchip technology inc. ds22063b-page 25 mcp1631/hv/mcp1631v/vhv % 2 % & %! % * " ) ' % * $ % %" % %% 133)))& &3 * downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 26 ? 2008 microchip technology inc. &'() & * ) && + , !" #&&* $ % ! "#$ %! & '(!%&! %( %")% % % " & ", " %!"& "$ % ! "$ % ! %#"&& " + & "% ,- . /01 / & % # % ! ))% !%% ,21 $ & '! ! )% !%% '$ $ & % ! % 2 % & %! % * " ) ' % * $ % %" % %% 133)))& &3 * 4% 55, , & 5&% 6 67 8 6!&( $ 6 % <./0 7 9 % > > "" * * <. . :. % " $$ . > > 7 ;"% , : : "" * ;"% , . .+ .< 7 5% < . 2 %5% 5 .. . . 2 % % 5 .,2 5 " * > . 2 % ? ? :? 5 ";"% ( > +: l l1 a2 c e b a1 a 12 note 1 e1 e d n ) 0/ downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 27 mcp1631/hv/mcp1631v/vhv -') &'() & * ) &- !" #-&&* $ % ! "#$ %! & '(!%&! %( %")% % % " & ", " %!"& "$ % ! "$ % ! %#" .&& " + & "% ,- . /01 / & % # % ! ))% !%% ,21 $ & '! ! )% !%% '$ $ & % ! % 2 % & %! % * " ) ' % * $ % %" % %% 133)))& &3 * 4% 55, , & 5&% 6 67 8 6!&( $ 6 % <./0 7 9 % > > "" * * : . % " $$ . > . 7 ;"% , </0 "" * ;"% , + . "" * 5% < <. << 2 %5% 5 . < . 2 % % 5 ,2 2 % ? > :? 5 " * > 5 ";"% ( > + d e e1 note 1 1 2 b e a a1 a2 c l1 l n ) 0::/ downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 28 ? 2008 microchip technology inc. notes: downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 29 mcp1631/hv/mcp1631v/vhv appendix a: revision history revision b (october 2008) the following is the list of modifications: 1. section 2.0 typical performance curves , input offset voltage: changed minimum, typical, maximum from -0.6, -, +0.6 to -5, -0.6, +5, respectively; 2. updated section 6.0 packaging informa- tion ; 3. updated the product identification system. revision a (october 2007) original release of this document. downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 30 ? 2008 microchip technology inc. notes: downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 31 mcp1631/hv/mcp1631v/vhv product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . part no. x /xx package temperature range device device mcp1631: high-speed pwm mcp1631t: high-speed pwm tape and reel mcp1631hv: high-speed pwm mcp1631hvt: high-speed pwm tape and reel mcp1631hv: high-speed pwm mcp1631hvt: high-speed pwm tape and reel mcp1631vhv: high-speed pwm mcp1631vhvt: high-speed pwm tape and reel voltage options 330 = 3.3v 500 = 5.0v temperature range e = -40c to +125c package ml = plastic quad flat, no lead (4x4x0.9), 20-lead ss = plastic shrink small outline (5.30 mm), 20-lead st = plastic thin shrink small outline (4.4 mm), 20-lead * all package offerings are pb free (lead free) examples: a) mcp1631-e/ml: high-speed pwm, 20ld qfn package. b) mcp1631-e/ss: high-speed pwm, 20ld ssop package. c) mcp1631-e/st: high-speed pwm, 20ld tssop package. a) mcp1631hv-330e/ss:high speed pwm, current mode control, 3.3v internal regulator, 20ld ssop package. b) mcp1631hv-500e/ss: high speed pwm, current mode control, 5.0v internal regulator, 20ld ssop package. c) mcp1631hv-500e/st:high speed pwm, current mode control, 5.0v internal regulator, 20ld tssop package. a) mcp1631vhvt-500e/st:high speed pwm, voltage mode control, 5.0v internal regulator, 20ld tssop package. b) mcp1631vhv-330e/ss: high speed pwm, voltage mode control, 3.3v internal regulator, 20ld ssop package. c) mcp1631vhv-330e/st:high speed pwm, voltage mode control, 3.3v internal regulator, 20ld tssop package. -xx x voltage options downloaded from: http:/// mcp1631/hv/mcp1631v/vhv ds22063b-page 32 ? 2008 microchip technology inc. notes: downloaded from: http:/// ? 2008 microchip technology inc. ds22063b-page 33 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, rfpic, smartshunt and uni/o are registered trademarks of microchip te chnology incorporated in the u.s.a. and other countries. filterlab, linear active thermistor, mxdev, mxlab, seeval, smartsensor and the embedded control solutions company are registered tradema rks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, application maestro, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, in-circuit serial programming, icsp, icepic, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, pickit, picdem, picdem.net, pictail, pic 32 logo, powercal, powerinfo, powermate, powertool, real ice, rflab, select mode, total endurance, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2008, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchips c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the companys quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. downloaded from: http:/// ds22063b-page 34 ? 2008 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://support.microchip.com web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 kokomo kokomo, in tel: 765-864-8360 fax: 765-864-8387 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8528-2100 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - hong kong sar tel: 852-2401-1200 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8203-2660 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-4182-8400 fax: 91-80-4182-8422 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - yokohama tel: 81-45-471- 6166 fax: 81-45-471-6122 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-572-9526 fax: 886-3-572-6459 taiwan - kaohsiung tel: 886-7-536-4818 fax: 886-7-536-4803 taiwan - taipei tel: 886-2-2500-6610 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 w orldwide s ales and s ervice 01/02/08 downloaded from: http:/// |
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